Condensate luminescence under ultraviolet excitation: application to the study of ultrathin SOI layersTAJIMA, Michio; IBUKA, Shigeo; ARAI, Shigenori et al.Materials science & engineering. B, Solid-state materials for advanced technology. 2002, Vol 91-92, pp 10-15, issn 0921-5107Conference Paper

Proceedings of the Eighth International Conference on Defects - Recognition, Imaging and Physics in Semiconductors, Narita, Japan, September 15-18, 1999OGAWA, Tomoya; TAJIMA, Michio.Journal of crystal growth. 2000, Vol 210, Num 1-3, issn 0022-0248, 432 p.Conference Proceedings

Photoluminescence Analysis of Iron Contamination Effect in Multicrystalline Silicon Wafers for Solar CellsTAJIMA, Michio; IKEBE, Masatoshi; OHSHITA, Yoshio et al.Journal of electronic materials. 2010, Vol 39, Num 6, pp 747-750, issn 0361-5235, 4 p.Conference Paper

MUSES-C solar array electrical and mechanical designTAKAHASHI, Koh; OKADA, Yasuhiko; ARAI, Hidetoshi et al.ESA SP (Print). 2002, pp 439-444, issn 0379-6566, isbn 92-9092-812-3, 6 p.Conference Paper

Lattice images of dislocations with edge components in GaN epilayers grown on Al₂O₃ substratesJUNYONG KANG; OGAWA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 157-161, issn 0022-0248Conference Paper

Influence of distributed defects on the photoelectric characteristics of a large-area deviceSOPORI, B; WEI CHEN.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 375-378, issn 0022-0248Conference Paper

TEM assessment of GaN epitaxial growthBROWN, P. D.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 143-150, issn 0022-0248Conference Paper

AFM and photoluminescence characterization of defects in the mirror-polished ZnSe bulk crystals and MBE-grown homoepitaxial layersKISHINO, M; TAGUCHI, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 230-233, issn 0022-0248Conference Paper

Effects of an inhomogeneous carrier concentration depth profile on deep-level transient spectroscopy measurementsITO, A; TOKUDA, Y.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 384-387, issn 0022-0248Conference Paper

Characterization of defects in annealed Czochralski-grown silicon wafers by photoluminescence methodYAMAMOTO, T; NISHIHARA, K.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 69-73, issn 0022-0248Conference Paper

Nano-scale defect analysis by BEEMVON KÄNEL, H; MEYER, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 401-407, issn 0022-0248Conference Paper

Dominant radiation-induced defects in space solar cell silicon manifested by photoluminescence spectroscopyTAJIMA, Michio; WARASHINA, Masatoshi; HISAMATSU, Tadashi et al.ESA SP (Print). 2002, pp 741-745, issn 0379-6566, isbn 92-9092-812-3, 5 p.Conference Paper

Life cycle of grown-in defects in silicon as observed by IR-LSTKISSINGER, G; VANHELLEMONT, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 7-14, issn 0022-0248Conference Paper

Imaging of hydrogen distribution on solid surfaces by desorption spectroscopyUEDA, K.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 416-420, issn 0022-0248Conference Paper

Excess lateral photo-response caused by technological and constructive defects in the IR-sensitive hybrid microcircuitsVAINER, B. G.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 356-360, issn 0022-0248Conference Paper

Crystal growth of micropipe free 4H-SiC on 4H-SiC{0 3 3 8} seed and high-purity semi-insulating 6H-SiCSHIOMI, Hiromu; KINOSHITA, Hiroyuki; FURUSHO, Tomoaki et al.Journal of crystal growth. 2006, Vol 292, Num 2, pp 188-191, issn 0022-0248, 4 p.Article

Analysis of grown-in defects in Czochralski SiITSUMI, M.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 1-6, issn 0022-0248Conference Paper

Investigations on the low-energy proton-induced defects on Ti/N-GaAs Schottky barrier diode parametersJAYAVEL, P; KUMAR, J.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 268-272, issn 0022-0248Conference Paper

Characterization of silicon-on-insulator wafers by photoluminescence under UV light excitationTAJIMA, Michio.Journal of crystal growth. 2002, Vol 237-39, pp 324-329, issn 0022-0248, 1Conference Paper

Complex defects in electron-irradiated ZnSSHONO, Y; OKA, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 278-282, issn 0022-0248Conference Paper

Microscopic observation of strain induced in heteroepitaxial layers with reflection type of infrared polariscopeYAMADA, M; TAO CHU.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 102-106, issn 0022-0248Conference Paper

A quantitative approach to Makyoh (magic-mirror) topographyRIESZ, F.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 370-374, issn 0022-0248Conference Paper

Self-formation of ultra small structures on vicinal Si substrates for nano-device arrayHANAJIRI, T; SUGANO, T.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 85-89, issn 0022-0248Conference Paper

Effect of C/B sequential implantation on the B acceptors in 4H-SiCNAKANO, Y; KACHI, T; TADANO, H et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 283-287, issn 0022-0248Conference Paper

Characterization of grown-in stacking faults and dislocations in CZ-Si crystals by bright field IR laser interferometerNAKAI, K; HASEBE, M; OHTA, K et al.Journal of crystal growth. 2000, Vol 210, Num 1-3, pp 20-25, issn 0022-0248Conference Paper